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ics for communications high voltage subscriber line ic hv-slic peb/f 4065 version 3.0 data sheet 03.98 ds 1 http://ww w .siem e n s .d e / se m ic o n d u ct o r /
slicofi ? is a registered trademark of siemens ag. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide: see our webpage at http:/ /www.siemens.de/semiconductor/address/address.htm. peb/f 4065 revision history: current version: 03.98 previous version: 01.96 page (in previous version) page (in current version) subjects (major changes since last revision) edition 03.98 published by siemens ag, hl sp, balanstra?e 73, 81541 mnchen ? siemens ag 1998. all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you C get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1 a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be en- dangered.
peb/f 4065 table of contents page semiconductor group 3 1998-03-01 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 1.1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 1.2 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.3 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 2.2 operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 2.3 thermal resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 2.4 electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 2.5 ac-characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 3 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
p-dso-20-5 semiconductor group 4 1998-03-01 high voltage subscriber line ic hv-slic peb/f 4065 version 1.1 spt type ordering code package peb/f 4065 on request p-dso-20-5 1 overview the high voltage subscriber line ic peb 4065 is a rugged and reliable interface between the telephone line and the slicofi, a low voltage subscriber line interface and codec filter ic. it is fabricated in a smart power technology offering a breakthrough voltage of at least 170 v. the peb 4065 provides battery feeding between C 24 v and C 80 v and internal ringing injection with a differential ring voltage up to 85 vrms. in order to achieve these high amplitudes an auxiliary positive battery voltage is used during ringing. this voltage can also be applied in order to drive very long telephone lines. the slic is designed for a voltage feeding C current sensing line interface concept and provides sensing of transversal and longitudinal current on both wires. a power-down mode offers reduced power consumption at full functionality; in the power denial mode the device is switched off turning the line outputs to a high impedance state. 1.1 features ? high voltage line feeding ? internal ring and metering signal injection ? sensing of transversal and longitudinal line current ? reliable 170 v smart power technology ? battery voltage C 24 v C 80 v ? boosted battery mode for long telephone lines and up to 85 vrms balanced ringing ? polarity reversal ? small p-dso-20-5 power package
peb/f 4065 overview semiconductor group 5 1998-03-01 1.2 functional description figure 1 block diagram the peb 4065 supports ac and dc control loops based on feeding a voltage v ab to the line and sensing the transversal line current i ab ( figure 2 ). it converts a unipolar input voltage v 2w into a differential output voltage v ab with an ac receiving gain of ? gr ? = v abac / v 2wac = 40. this is accomplished by converting the input voltage to a current which is used to transpose the low voltage signals of the interface to the high voltage line feeding section. this current is reconverted to two voltages of opposite phase which are referenced to the positive and negative supply voltage, respectively. thus the differential dc line-voltage in all normal polarity modes except ringing is related to the input voltage by v abdc = v bat C v hint + v fix C40 v 2wdc v bat negative battery voltage v hint internal positive supply voltage v fix internal voltage drop of supply filter (appr. 2 v). depending on the operation mode, v hint is switched either to v h ( v hint = v h C1v) or to bgnd ( v hint = C 0.5 v) via the supply switch. itb10371 buffer buffer current sensor differential supply control v/i converter reference switch i/v-converter supply c1 c2 v pdn 2w agnd bat vv bim ss v dd v ring tip v ab bgnd hint v a i i b v bat v h i tl i
peb/f 4065 overview semiconductor group 6 1998-03-01 controlled by c2, the polarity of v ab can be reversed and the dc-line-voltage then is v abdc =C( v bat C v hint + v fix C40 v 2wdc ). the transversal and longitudinal currents are measured in the buffers and scaled images are provided at the i t and i l pin, respectively: i t =( i a + i b )/100 = i ab /50 i l =C( i a C i b )/100 = C i long /50. the peb 4065 operates in four modes controlled by ternary logic signals at the c1 and c2 input. additionally, in the active modes a polarity reversal of the output voltage can be programmed (see table 1 ). power down (pd): power consumption is reduced by decreasing bias current levels. all functions operate at some small performance reductions. in this mode each of the line outputs can be programmed to show high impedance. hi b switches off the tip buffer, while the current through the ring output still can be measured by i t or i l . programming hi a reverses the polarity and switches off the ring buffer. conversation (conv) : this is the regular transmit and receive mode for voiceband and teletax. the line driving section is operated between v bat and bgnd. boosted battery (bb): in order to drive longer telephone lines an auxiliary positive battery voltage v h is used, enabling a higher dc-voltage across the line. ringing (ring): this mode also uses the auxiliary voltage v h in order to provide a balanced ring signal of up to 85 vrms. the ring tone without any dc-component has to be switched to the v 2w input. internally a dc-voltage is superimposed. this voltage is proportional to the total supply voltage v h C v bat and amounts to typically 23 v at v h C v bat = 120 v. the current sensing functions are available for ring trip detection. the power denial (pdn) state is intended to reduce power consumption of the linecard to a minimum: the peb 4065 is switched off completely by connecting the pdn pin to v dd , no operation is available. with respect to the output impedance of tip and ring two pdn-modes have to be distinguished. a resistive one (pdnr) provides a connection of 15 k w each from tip to bgnd and ring to v bat , respectively, while the outputs of the buffers show high impedance ( figure 3 ). the other mode (pdnh) offers high impedance at tip and ring. it is entered when, in addition to connecting pdn to v dd , the programming inputs c1, c2 are tied to v il . all other combinations of c1, c2 yield the resistive power denial state pdnr.
peb/f 4065 overview semiconductor group 7 1998-03-01 np normal polarity rp...reverse polarity hi a rp ring wire set to high impedance hi b np tip wire set to high impedance figure 2 definition of output current directions table 1 programming of operation modes c2 (pin 13) v il v iz v ih c1 (pin 12) v il ring rp ring np hi a rp v iz bb rp bb np hi b np v ih conv rp conv np pd np its10372 buffer buffer i long ~ ~ long i i a b i i ab ab v ring tip l z 2 i ab = ( a i + i b ) /2 ) /2 b i - i a = ( long i 2 z l
peb/f 4065 overview semiconductor group 8 1998-03-01 figure 3 tip and ring impedance in power denial its10373 hiz hiz tip ring bgnd v bat tg r 15 k w pdnr pdnh pdnr pdnh w 15 k r rb
peb/f 4065 overview semiconductor group 9 1998-03-01 1.3 pin description figure 4 pin configuration (top view) table 2 pin definition and functions pin no. symbol type input (i) output (o) function 1, 10, 11, 20 v bat supply negative battery supply voltage (C 24 C 80 v), referred to bgnd 2 ring o subscriber loop connection, negative wire in normal polarity; direction of positive i a current out of this pin 3 tip o subscriber loop connection, more positive wire in normal polarity; direction of positive i b current into this pin 4 C n.c. not connected 5 v h supply auxiliary positive battery supply voltage (0 + 90 v) used in ringing and boosted battery mode 6 bgnd supply battery ground: tip, ring, v bat and v h refer to this pin 7 v dd supply positive supply voltage (+ 5 v), referred to agnd p-dso-20-5 (11 mm) bat v ring tip n.c. agnd c2 bgnd c1 agnd pdn 20 1 itp10374 v h v dd v 2w v bim v bat bat v v ss bat v due to reverse bending of the leads, the numbering of the pins is also reversed. 2 3 4 5 6 7 8 9 10 19 18 17 16 15 14 13 12 11 l i i t
peb/f 4065 overview semiconductor group 10 1998-03-01 8 v 2w i two wire input voltage; multiplied by + 20 and C 20, respectively, it appears at the tip and ring outputs 9 v bim o down scaled image of the total supply voltage ( v hint C v bat ); scaling factor 40 12 pdn i/o power denial, reference output when connected to ground via a resistor, switches the device off when connected to v dd 13, 16 agnd supply analog ground: v dd , v ss and all signal and control pins with exception of tip and ring refer to agnd 14 c1 i/o ternary logic input, controlling the operation mode; in case of thermal overload this pin sinks a current of typ. 550 m a 15 c2 i ternary logic input, controlling the operation mode 17 i t o current output representing the transversal current scaled down by 50; in normal polarity this pin sinks the i t current. 18 i l o current output representing the longitudinal current scaled down by 50; for i long flowing out of tip and ring this pin sinks the i l current. 19 v ss supply negative supply voltage (C 5 v), referred to agnd table 2 pin definition and functions (contd) pin no. symbol type input (i) output (o) function
peb/f 4065 electrical characteristics semiconductor group 11 1998-03-01 2 electrical characteristics 2.1 absolute maximum ratings note: maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 1) see test figure 10 . table 3 parameter symbol limit values unit condition min. max. battery voltage v bat C 90 0.5 v referred to bgnd auxiliary supply voltage v h C 0.5 90 v referred to bgnd total battery supply voltage, continuously v h C v bat C 160 v C total battery supply voltage, pulse < 1 ms v h C v bat C 170 v C v dd supply voltage v dd C 0.4 5.5 v referred to agnd v ss supply voltage v ss C 5.5 0.4 v referred to agnd ground voltage difference v bgnd C v agnd C0.5 0.5 v C junction temperature t j C 150 c C input voltages v 2w , v c1 , v c2 v ss C0.3 v dd +0.3 v C voltages on current outputs v it , v il C3.5 v dd +0.3 v C voltages on pdn v pdn C0.3 v dd +0.3 v C ring, tip voltages, continuously v a , v b v bat C0.3 v h +0.3 v C ring, tip voltages, pulse < 1 ms 1) v a , v b v bat C10 v h +10 v C ring, tip voltages, pulse < 1 m s 1) v a , v b v bat C30 v h +30 v C esd-voltage, all pins C C 1 kv human body model
peb/f 4065 electrical characteristics semiconductor group 12 1998-03-01 2.2 operating range note: in the operating range the functions given in the circuit description are fulfilled. 2.3 thermal resistances table 4 parameter symbol limit values unit condition min. max. battery voltage v bat C 80 C 24 v referred to bgnd auxiliary supply voltage v h 5 85 v referred to bgnd total battery supply voltage v h C v bat C 150 v C v dd supply voltage v dd 4.75 5.25 v referred to agnd v ss supply voltage v ss C 5.25 C 4.75 v referred to agnd ground voltage difference C C 0.3 0.3 v C ambient temperature t amb 0 C40 70 85 c c peb 4065 pef 4065 voltage compliance i t , i l v it , v il C3 3 v C input range v 2w v 2w C 3.2 + 3.2 v ring C 3.2 0 v conv, pd, bb table 5 parameter symbol limit values unit condition junction to case r th, jc 5k/wC junction to ambient r th, ja 20 k/w with heatsink, typ.
peb/f 4065 electrical characteristics semiconductor group 13 1998-03-01 2.4 electrical parameters min/max values are valid within the full operating range. if peb- and pef-specifications are different, both values can be found in the respective column. testing is performed according to the test figures with external circuitry as depicted in figure 4 . unless otherwise stated, load impedance r l = 600 w . test temperatures are 25 and 70 c for peb, C 40, 25 and 85 c for pef-type (without heatsink). dc line voltages refer to v bat = C 70 v and v h =+60v. table 6 supply currents and power dissipation no. parameter symbol mode limit values unit test fig. min. typ. max. peb/pef power denial 1. v dd current i dd pdnh, pdnr C 50 120/150 m a 1 2. v ss current i ss pdnh pdnr C50 150 120/150 250/300 m a 1 3. v bat current i bat pdnh pdnr C10 50 30 120 m a 1 4. v h current i h pdnh, pdnr C110 m a 1 power down v 2w =C0.5v 1) 5. v dd current i dd pd C0.51.0 ma 1 6. v ss current i ss pd C 0.3 0.4 ma 1 7. v bat current i bat pd C 3.3 4.3/4.4 ma 1 8. v h current i h pd C 1 10 m a 1 9. quiescent power dissipation p q pd C C 315 mw 1 conversation, normal and reverse polarity v 2w =C0.5v 1) 10. v dd current i dd conv C 0.8 1.0/1.1 ma 1 11. v ss current i ss conv C 0.4 0.5/0.6 ma 1 12. v bat current i bat conv C 4.0 5.8/5.9 ma 1 13. v h current i h conv C 1 10 m a 1 14. quiescent power dissipation p q conv C C 420 mw 1
peb/f 4065 electrical characteristics semiconductor group 14 1998-03-01 1) i bat and i h depend on the value of v 2w : i bat ( v 2w )= i bat(0) +| v 2w |/440 w typ. (pd, conv, bb) i h ( v 2w )= i h(0) +| v 2w |/440 w typ. (bb) boosted battery mode normal and reverse polarity v 2w =C0.5v 1) 15. v dd current i dd bb C0.81.0 ma 1 16. v ss current i ss bb C 1.7 2.0 ma 1 17. v bat current i bat bb C 4.0 6.1/6.2 ma 1 18. v h current i h bb C 3.0 4.8 ma 1 19. quiescent power dissipation p q bb C C 740 mw 1 ringing mode normal and reverse polarity v 2w =0v 20. v dd current i dd ring C 2.3 2.6 ma 1 21. v ss current i ss ring C 2.8 3.2 ma 1 22. v bat current i bat ring C 8.8 12/12.5 ma 1 23. v h current i h ring C 7.1 10 ma 1 24. quiescent power dissipation p q ring C 1300 1500 mw 1 table 6 supply currents and power dissipation (contd) no. parameter symbol mode limit values unit test fig. min. typ. max. peb/pef
peb/f 4065 electrical characteristics semiconductor group 15 1998-03-01 table 7 dc-characteristics no. parameter symbol mode limit values unit test fig. test condition min. peb/ pef typ. max. peb/ pef line termination tip, ring 25. power down dc line voltage | v ab,dc |pd 46 49 52 v 2 v 2w =C0.5v 26. pd C 14 C 11 C 8 v v 2w =C2v 27. conversation dc line voltage | v ab,dc | conv 65 66.5 68.5 v 2 v 2w =0v 28. conv 46.6 47.8 48.8 v v 2w =C0.5v 29. conv C 14 C 12.2 C 10.4 v v 2w =C2v 30. ringing dc line voltage | v ab,dc | ring 22.1 25 27.7 v 2 v 2w =0v 31. output current limit | i a,max |, | i b,max | pd others 85/80 90/85 C C 130 130/ 135 ma ma 3 v 2w =C0.5v v a , v b acc. to test figure 3 32. loop open resistance tip to bgnd r tg pdnr 12/11 15 18/19 k w 9 i b =2ma 33. loop open resistance ring to v bat r rb pdnr 12/11 15 18/19 k w i a =2ma 34. power denial output leakage current i leak,a pdnh C 30 C 30 m aC v bat < v a < v h 35. i leak,b C30 C 30 m a v bat < v a < v h 36. high impedance output leakage current i leak,a hi a C 30 C 30 m aC v bat < v a < v h-3 37. i leak,b hi b C 30 C 30 m a v bat < v b < v h-3
peb/f 4065 electrical characteristics semiconductor group 16 1998-03-01 reference voltage outputs pdn, v bim 38. output voltage on pdn v ref all 1.15 1.25 1.35 v 1 C 39. battery image voltage v bim conv, pd C 1.75 C 1.7 C 1.65 v 1 C 40. bb, ring C 3.25 C 3.18 C 3.1 v two-wire input v 2w 41. input current i 2w all C 30 C 30 m aC C3.2v< v 2w <3.2v 42. input capacitance C C C C 20 pf C C current outputs i t , i l v 2w =C0.5v 43. i t output current | i t |pd, conv CC 15 m a2 i a = i b =0 44. pd, conv 380 420 m a i a = i b =20ma 1) 45. conv 0.95 1.05 ma i a = i b = 50ma 1) 46. ring 20 m a i a = i b =0 47. i l output current | i l |pd, conv CC 30 m a2 i a = i b =0 48. pd, conv 30 m a i a = i b =20ma 1) 49. pd, conv 65 135 m a i a =15ma, i b =25ma 50. conv 180 320 m a i a =37.5ma, i b =62.5ma table 7 dc-characteristics (contd) no. parameter symbol mode limit values unit test fig. test condition min. peb/ pef typ. max. peb/ pef
peb/f 4065 electrical characteristics semiconductor group 17 1998-03-01 1) polarity of i a and i b is reversed for measurement in reverse polarity mode note: the listed characteristics are ensured over the operating range of the integrated circuit. typical characteristics specify mean values expected over the production spread. if not otherwise specified, typical characteristics apply at t a =25 c and the given supply voltage. control inputs c1, c2 51. h-input voltage v ih all 2 CCvCC 52. z-input voltage v iz all C 0.8 C 0.8 v C C 53. l-input voltage v il all C C C 2 v C C 54. input leakage current i leak all C 5 C 5 m a C C5v< v c1(2) <+5v 55. thermal overload current c1 i therm all 500 550 C m aC v c1 =C3.2v 56. switching temperature (guaranteed by design) t joff t jon all all C C 165 145 C C c c C C C C table 7 dc-characteristics (contd) no. parameter symbol mode limit values unit test fig. test condition min. peb/ pef typ. max. peb/ pef
peb/f 4065 electrical characteristics semiconductor group 18 1998-03-01 2.5 ac-characteristics (normal and reverse polarity unless otherwise stated) table 8 no. parameter symbol mode limit values unit test fig. test condition min. typ. max. peb/ pef line termination tip, ring 57. receive gain gr conv, bb 31.92 32.04 32.16 db 4 v 2w,ac =50mvrms f = 1015 hz i ab =20ma 58. conv 31.88 32.04 32.2 db i ab =50ma 59. gain flatness (guaranteed by design) dgr conv, bb C 0.05 C 0.05 db C 300 hz < f < 3400 hz v 2w,ac =50mvrms 60. gain tracking (guaranteed by design) dgr conv C 0.2 C 0.2 db C 3 dbm0 > v ab > C20dbm0 f = 1015 hz 61. total harmonic distortion v ab thd conv C C 0.3 % 4 v 2w,ac =50mvrms f = 1015 hz i ab =20ma 62. teletax distortion thdttx conv CC 3 % 5 f =16khz r l = 200 w i ab =50ma v ab,ac =2vrms 63. C C 3 % v ab,ac =5vrms i ab =0ma, v ab =55v 64. C C 5 % v ab,ac =2vrms 65. psophometric noise n p , v ab conv C C C 75 dbmp 4 i ab =30ma 66. longitudinal to transversal rejection ratio v long / v ab ltrr conv 61/58 C C db 6 v long =3vrms 300 hz < f <3.4khz i ab =30ma 67. transversal to longitudinal rejection ratio v ab / v long tlrr conv 50 C C db 7 v 2w,ac = 150 mvrms 300 hz < f <3.4khz i ab =30ma
peb/f 4065 electrical characteristics semiconductor group 19 1998-03-01 68. power supply rejection ratio v bat / v ab psrr conv, bb pd 33 30/28 40 C C C db db 4 300 hz < f < 3.4 khz v supply,ac = 100 mvp i ab =30ma 69. v h / v ab bb 33/30 40 C db 70. v dd / v ab conv, bb 33 50 C db 71. v ss / v ab conv, bb 33 50 25 Cdb db 72. ringing voltage v ring ring 67 C C vrms, diff 8 r l =1k w c l =1 m f f =66hz v 2w = 1.7 vrms 73. ringing voltage with extended v h 84 C C vrms, diff 8 v h =80v f =20hz v 2w = 2.2 vrms 74. ringing distortion thd ring C C 4 % 8 f =66hz v 2w = 1.7 vrms transversal current output i t 75. transversal current ratio git conv, bb 33.89 33.98 34.07 db 4 v 2w = 50 mvrms f = 1015 hz i ab =20ma 76. conv 33.89 33.98 34.07 db i ab =50ma 77. gain flatness (guaranteed by design) dgit conv, bb C 0.05 C 0.05 db C 300 hz < f < 3400 hz v 2w,ac = 50 mvrms i ab =20ma 78. gain tracking (guaranteed by design) dgit conv C 0.2 C 0.2 db C 3 dbm0 > v ab > C20dbm0 f = 1015 hz 79. total harmonic distortion v it thd, i t conv C 0.01 0.3 % 4 v 2w,ac =50mvrms f = 1015 hz i ab =15ma table 8 (contd) no. parameter symbol mode limit values unit test fig. test condition min. typ. max. peb/ pef
peb/f 4065 electrical characteristics semiconductor group 20 1998-03-01 80. psophometric noise n p , v it conv CC C100 -97 dbmp 4 i ab =30ma, t>0 0 c -40 0 c peb/f 4065 electrical characteristics semiconductor group 21 1998-03-01 note: exceeding the min./max. limits can cause stability problems! table 9 external elements in the application circuit (figure 5) typical values are used in the test circuits, unless otherwise specified. ext. part function typ. value tolerance limit values comment min. max. r 1 biasing, current reference 25 k w CC50k w power dissipation increases with smaller r 1 r 2 , r 3 i t , i l gain adjustment 1k w 0.1% (rel.) C C clipping for i t r 2 >3v or i l r 3 >3v r s protection, isolation of capacitive load 50 w 0.1% (rel.) 30 w CC r 5 , r 6 protection 50 w 0.1% (rel.) C C C c 1 c for the internal supply voltage filter 22 m f ( f 3db ? 3hz) 20% 10 nf C f 3db increases with smaller c 1 , causing worse low frequency psrr from v bat c s suppression of voltage spikes, frequency compensation 15 nf 5% (rel.) 200 pf 20 nf C c 2 , c 3 v dd , v ss supply voltage blocking 1 m f 20% 10 nf C c 2 , c 3 >1 m f and c 4 ? c 5 allows arbitrary switching sequence of all supply voltages incl. c 4 v h blocking 100 nf C C C c 5 v bat blocking 100 nf 20% 100 nf C ground
peb/f 4065 electrical characteristics semiconductor group 22 1998-03-01 figure 5 application circuit its10506 tip c1 peb 4065 dd v ss v bat v c 2 1 m f 3 c f m 1 c 4 100 nf 5 c 100 nf 5 v -5 v 60 v -70 v 7 19 5 1, 10, 11, 20 + 1 c f/10 v m 22 1 k r il w w it r 1 k bgnd agnd 17 18 6 13 16 9 24.9 k r 1 w 12 8 15 14 c2 v 2w pdn s r r 6 w 5 r 51 30 r s w w 30 51 w c s 15 nf 15 nf s c subscriber line slicofi peb 3065 ring 3 2 1) 1) 2) b a careful symmetrical board layout with respect to a and b connect close to pin 16 1) 2) 5 v v h bim v i tt i
peb/f 4065 electrical characteristics semiconductor group 23 1998-03-01 test figure 1 dc characteristics and power dissipation its10507 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd il r r it v h v ss dd vv bat h v v bim bim c ss ii h bat i i dd ring bgnd pdn r v ref v dd pdn see testcond. l ii t
peb/f 4065 electrical characteristics semiconductor group 24 1998-03-01 test figure 2 dc line voltage and currents its10508 ring c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c tip bgnd see testcond. 25 k w ab v i a b i t i i l l ii t
peb/f 4065 electrical characteristics semiconductor group 25 1998-03-01 test figure 3 output current limit test figure 4 receive gain, transversal current ratio, thd, noise and power supply rejection its10509 ring c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c tip bgnd see testcond. 25 k w a v i a, max b, max i il rr it v b t i i l a vv b , : bgnd / bat v in pdn, conv bgnd in bb, ring its10510 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c ring bgnd see testcond. 25 k w il rr it dc and ac 2w, dc v v 2w, ac v it, ac s r r s l r v ab, ac r g = ab, ac v v 2w, ac it, ac v v ab, ac = g it 1000 660 t i i l
peb/f 4065 electrical characteristics semiconductor group 26 1998-03-01 test figure 5 teletax distortion test figure 6 longitudinal to transversal rejection ratio its10511 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c ring bgnd see testcond. 25 k w il rr it 2w, dc v v 2w, ac s r r s l r v ab, ac 2 m f t i i l its10512 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c ring bgnd see testcond. 25 k w il rr it 2w, dc v v it s r r s v ab, ac r l/2 l/2 r ~ ~ long v t i i l
peb/f 4065 electrical characteristics semiconductor group 27 1998-03-01 test figure 7 transversal to longitudinal rejection ratio test figure 8 ringing its10513 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c ring bgnd see testcond. 25 k w il rr it 2w, dc v s r r s v ab, ac r l/2 l/2 r long, ac v v 2w, ac t i i l its10514 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd v h v ss dd vv bat h v bim c ring bgnd see testcond. 25 k w il rr it 2w v s r r s v ring l r c l t i i l
peb/f 4065 electrical characteristics semiconductor group 28 1998-03-01 test figure 9 output resistance in pdnr mode test figure 10 tip, ring overvoltage pulses its10515 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd il r r it v h v ss dd vv bat h v bim c ss ii h bat i i dd ring bgnd pdn r v dd pdn see testcond. tip v ring v v bat i b a i v bat t i i l its10516 tip c1 peb 4065 bim v ss v bat v c2 v 2w pdn agnd v dd il r r it v h v ss dd vv bat h v v bim bim c ss ii h bat i i dd ring bgnd pdn r v ref v dd pdn 30 w w 30 h v +10 v / 1 ms +20 v / 1 s v h bat v -10 v / 1 ms -20 v / 1 s v bat m t i i l m
peb/f 4065 package outlines semiconductor group 29 1998-03-01 3 package outlines p-dso-20-5 (plastic dual small outline package) gps05755 sorts of packing package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device

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